Kingston KVR13LR9S4/8HA 8GB DDR3-1333 PC3-10666 ECC Registered CL9 SR x4 1.35V w/TS Hynix A Memory RAM

• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~

1.575V) Power Supply

• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

• 667MHz fCK for 1333Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

• Bi-directional Differential Data Strobe